Global RF GaN (Radio Frequency Gallium Nitride) Market by Application (Military, Telecom Infrastructure, Satellite Communication, Wired Broadband, Commercial Radar and Avionics, and RF Energy), Material (GaN-on-Sic and GaN-on-Silicon), Regional Forecasts 2021-2027

Global RF GaN (Radio-Frequency Gallium Nitride) Market is valued approximately at USD 0.67 billion in 2020 and is anticipated to grow with a healthy growth rate of more than 30.58% over the forecast period 2021-2027. GAN stands out in RF applications for a variety of reasons, including its strong breakdown field, high saturation velocity, and outstanding thermal characteristics, which have proven useful in carrying signals over long distances or at high power levels. 

The market growth is driven by the supporting factors such as Increasing adoption of RF GaN in electric automotive and increasing implementation of IoT devices. For instance, In India, NITI Aayog has launched Clean transportation plan in 2018. promoted eliminating all EVS permission restrictions in order to promote electric mobility. Furthermore, the International Energy Agency estimates that about 1.5 million battery electric vehicles were shipped globally in 2018. These statistics suggest that, throughout the predicted period, the adoption of RF GaN will be boosted due to the expansion of electric cars. However, Increasing cost associated with usages of high performance devices, may impede market growth over the forecast period of 2021-2027.

Geographically, Asia Pacific is dominating the region factors owing to the growing demand of the wearable devices, smartphones, and other devices along with introduction of 5G technology in the region.  Furthermore, increasing focus on investments to develop infrastructure, in order to support 5G technology, is expected to surge the demand for RF semiconductors across the APAC region in the forecast years.

Major market player included in this report are:
Analog Devices Inc.
Aethercomm Inc.
Microsemi Corporation
MACOM Technology Solutions Holdings Inc.
Mitsubishi Electric Corporation
Sumitomo Electric Device Innovations Inc.
Integra Technologies Inc.
NXP Semiconductors NV
Wolfspeed Inc.
Qorvo Inc.

The objective of the study is to define market sizes of different segments & countries in recent years and to forecast the values to the coming eight years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within each of the regions and countries involved in the study. Furthermore, the report also caters the detailed information about the crucial aspects such as driving factors & challenges which will define the future growth of the market. Additionally, the report shall also incorporate available opportunities in micro markets for stakeholders to invest along with the detailed analysis of competitive landscape and product offerings of key players. 

The detailed segments and sub-segment of the market are explained below:

By Material Type:
GaN-on-Si
GaN-on-SiC
Other Material Types (GaN-on-GaN, GaN-on-Diamond)

By Application:
Military
Telecom Infrastructure (Backhaul, RRH, Massive MIMO, Small Cells)
Satellite Communication
Wired Broadband
Commercial Radar and Avionics
RF Energy

By Region:
North America
U.S.
Canada
Europe
UK
Germany
France
Spain
Italy
ROE

Asia Pacific
China
India
Japan
Australia 
South Korea
RoAPAC
Latin America
Brazil
Mexico
Rest of the World

Furthermore, years considered for the study are as follows:

Historical year – 2018, 2019
Base year – 2020
Forecast period – 2021 to 2027.

Target Audience of the Global RF GaN (Radio-Frequency Gallium Nitride) Market in Market Study:

Key Consulting Companies & Advisors
Large, medium-sized, and small enterprises
Venture capitalists
Value-Added Resellers (VARs)
Third-party knowledge providers
Investment bankers
Investors