NA SiC Power Semiconductor Market - Industry Trends and Forecast to 2030

North America SiC power semiconductor market is projected to register a CAGR of 26.2% in the forecast period of 2023 to 2030. The new market report contains data for the historic year 2021, the base year of calculation is 2022, and the forecast period is 2023 to 2030.
Market Segmentation:
North America SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others), Country (U.S., Canada, and Mexico), Industry Trends And Forecast To 2030

Some of the major factors contributing to the growth of the North America SiC power semiconductor market are:

• Increasing demand for SiC power semiconductor devices in data storage and wireless industries
• Rising penetration of electronic vehicles

Market Players:

Some of the major players operating in the North America SiC power semiconductor market are:

• WOLFSPEED, INC.
• STMicroelectronics
• ROHM CO., LTD.
• Fuji Electric Co., Ltd.
• Mitsubishi Electric Corporation
• Texas Instruments Incorporated
• Infineon Technologies AG
• Semikron Danfoss
• Renesas Electronics Corporation
• TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
• Microchip Technology Inc.
• Semiconductor Components Industries, LLC
• NXP Semiconductors
• UnitedSiC
• SemiQ Inc.
• Littlefuse, Inc.
• Allegro MicroSystems, Inc.
• Hitachi Power Semiconductor Device, Ltd. (A Subsidiary of Hitachi Group)
• GeneSiC Semiconductor Inc.